unisonic technologies co., ltd 60N06 power mosfet www.unisonic.com.tw 1 of 8 copyright ? 2012 unisonic technologies co., ltd. qw-r502-121.c 60a, 6 0 v n-chan nel power mosfet ? descripti on t he u t c 60N06 is n-c h ann el en ha nc ement mod e po w e r field effect transistors w i th stabl e off-stat e charact e risti cs, fast s w itc h in g sp ee d, lo w th ermal resistanc e, usu a ll y us ed at tel e com and com puter appl icati on. ? features * r ds (on) = 1 8 m ? @ v gs = 10 v * ultra lo w g a te charge ( t y pic a l 39 nc ) * f a st s w itchi n g capa bil i t y * lo w rev e rse transfer ca pacit ance (c rs s = ty p i ca l 11 5pf ) * avala n che e n e rg y s pec ified * improved dv/ d t capab ilit y, hi gh rug ged ness ? sy mbol 1. ga te 3.source 2.drai n ? or de r i ng i n form at i o n ordering n u m ber package pi n assi gn me nt packing lea d f r ee halo ge n f r ee 1 2 3 60n0 6l-t a 3-t 60n0 6 g-t a 3-t t o -220 g d s t ube 60n0 6l-t f 3-t 60n0 6 g-t f 3-t t o -220f g d s t ube 60n0 6l-t q 2-r 60n0 6 g-t q 2-r t o -263 g d s tape reel 60n0 6l-t q 2-t 60n0 6 g-t q 2-t t o -263 g d s t ube note: pin assignment: g: gate d: drain s: source http://
60N06 power mosfet unisonic technologi es co., ltd 2 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 1 2 1 . c ? absolute maxi mu m ra ting s paramet er symbol rat i ngs unit drain to so urc e voltag e v ds s 60 v gate to source voltage v gs 20 v contin uo us dr ain curr ent t c = 25c i d 60 a t c = 100c 39 a drain c u rrent pulse d (note 2 ) i dm 120 a avalanche energy singl e puls ed ( note 3) e as 1 0 00 mj repetitiv e (not e 2) e ar 180 mj po w e r diss i pat ion (t c = 25c) t o -220 p d 100 w t o -220f 70.62 t o -263 54 junctio n t e mperature t j + 150 c storage t e mperature t st g -55 ~ + 150 c note: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repe ativit y rati ng: puls e w i dth limited b y ju nc tion temper atur e 3. l= 0.61mh, i as = 60a, r g =20 ? , starting t j =25 ? th er mal dat a paramet er symbol rat i ngs unit junctio n to ambient t o -220/t o -220f ja 62.5 c/w t o -263 110 junction to case to -220 jc 1.25 c/w t o -220f 1.77 t o -263 2.31 ? electric al ch ara cteri s tic s (t c = 25c, unless other w i se specifi ed) paramet er symbol t es t conditions min t y p max unit off ch a racteristics drain-s ource breakd o w n vo l t age bv ds s v gs = 0 v , i d = 250 a 6 0 v drain-s ource l eaka ge curr en t i ds s v ds = 60 v, v gs = 0 v 1 a gate-source l eaka ge curr en t fo rw ard i gss v gs = 20v, v ds = 0 v 100 na reverse v gs = -20v, v ds = 0 v -100 na on ch a r a c t e ristics gate t h reshold voltage v gs ( th ) v ds = v gs , i d = 250 a 2.0 4.0 v static drain-s o urce on-state resistance r ds ( on ) v gs = 10 v, i d = 30a 14 18 m ? dyn a mic characteristics input cap a cita nce c iss v gs = 0v, v ds =25v, f = 1mhz 2000 pf output capac itance c oss 400 pf reverse t r ansfer capac itance c rs s 115 pf switching c h a r a c teris t ics t u rn-on delay time t d ( on ) v dd = 30v, i d = 60a, r l =0 .5 ? , v gs = 10v (note 2, 3) 12 30 ns rise t i me t r 11 30 ns t u rn-off delay time t d ( off ) 25 50 ns fall t i me t f 15 30 ns t o tal gate charge q g v ds = 30v, v gs = 10 v i d = 60a (note 2, 3) 39 60 nc gate-source c harg e q gs 12 nc gate-drain c h arge (mil l er ch arge) q gd 10 nc
60N06 power mosfet unisonic technologi es co., ltd 3 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 1 2 1 . c ? electric al ch ara cteri s tic s (cont.) parameter symbol test conditions min typ max unit source-drain diode ratings and characteristics diod e for w ard voltage v sd v gs = 0 v , i s = 60a 1.6 v contin uo us so urce curre nt i s 60 a pulse d source current i sm 120 reverse recovery time t r r i s = 60a, v gs =0 v, d i f /dt= 100a/ s 60 ns reverse recover y charge q rr 3.4 c note: 1. i sd 60a, di/dt 300a/ s, v dd bv dss , starting t j =25 2. pulse t e st: pulse w i dth 30 0 s, dut y cy cle 2% 3. essentia ll y in d epe nde nt of op eratin g temper ature.
60N06 power mosfet unisonic technologi es co., ltd 4 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 1 2 1 . c ? test circ uits and wav e for m s same type as d.u.t. l v dd driver v gs r g - v ds d. u. t. + * d v/d t co ntrolle d by r g * i sd con t ro lle d by p u lse peri o d * d.u.t.-d evice und e r te st p. w. period d= v gs (driver) i sd (d .u .t . ) i fm , bod y dio de f o rw ard cu rren t di /d t i rm body d iod e re verse c u rren t body diode recovery dv/dt bod y d i od e fo rward voltag e dro p v dd 10v v ds (d.u.t. ) - + v gs = p.w. period pe a k d i o d e r e c o v e r y d v / d t w a v e f o r m s
60N06 power mosfet unisonic technologi es co., ltd 5 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 1 2 1 . c ? test circ uits and wav e for m s (cont.) s w itchin g t est circu i t s w i t c h ing wav e forms g a t e c h a r g e t e s t c i r c u i t g a t e c h a r g e w a v e f o r m unc l a m ped in duc ti v e sw i t c h in g te s t circ uit un clamp e d in du cti v e s w itc h ing w a v e fo rms
60N06 power mosfet unisonic technologi es co., ltd 6 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 1 2 1 . c ? typical characteristics drain current, i d (a) drain current, i d (a) gate-to-source voltage, v gs (v) 20 03 050 transconductance, g fs (s) transconductance 10 50 40 20 70 0 40 drain current, i d (a) 40 06 0 0.0 1 2 on-resistance, r ds(on) ( ) on-resistance vs. drain current 20 0.0 1 6 0.0 0 8 0.0 0 4 0.0 2 0 0 80 60 30 10 tc = -55 25 125 v gs = 10v 10 0 drain-to-source voltage, v ds (v) 20 04 0 capacitance, c (pf) capacitance 10 20 00 10 00 30 00 0 30 total gate charge, q g (nc) 20 0 gate-to-source voltage, v gs (v) gate charge 10 4 2 10 0 30 25 00 15 00 500 ciss v gs = 10v i d = 6 0 a 40 coss crss 6 8
60N06 power mosfet unisonic technologi es co., ltd 7 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 1 2 1 . c ? typical characteristics(cont.) on-resistance, r ds(on) ( ? ) (normalized) source current, i s (a) drain current, i d (a) drain current, i d (a) square wave pulse duration (sec) 10 -4 normalized thermal transient impedance 10 -5 0. 1 0. 01 10 -3 10 -2 1 2 10 -1 0.2 0.1 0.05 0.02 single pulse du ty cy cle = 0 . 5 13
60N06 power mosfet unisonic technologi es co., ltd 8 of 8 w w w . uniso nic.co m.t w q w - r 5 0 2 - 1 2 1 . c ut c a s s u m e s n o r e s p o n s i b ilit y f o r e q u ip m e n t f a ilu r e s t h a t r e s u lt f r o m u s in g p r o d u cts a t v a lu e s th a t ex ce ed, ev e n m om en t ar i l y , r ate d v a l ue s (s uch as m a x i m um rati ngs , ope ra ti ng con di t i o n ra ng es , o r other parameters ) l i s ted i n pr odu cts s peci f i c a t i on s of a ny and all u t c p r od ucts d es c r i bed o r contai ne d her ei n. ut c p r od ucts a r e n ot de si gn ed f or us e i n l i f e s upp ort a p p l i ances , de v i ce s o r sy st em s w her e m a l f un cti o n o f thes e p r od ucts ca n b e rea son abl y ex pected to re su l t i n per so n a l i n j u r y . r epr od ucti o n i n w hol e o r i n par t is p r oh i b i t e d w i tho u t the p r i o r w r i tte n con sent o f the co pyr i ght ow n e r . t h e i n f o rm ati o n pre sen ted i n th i s do cum e n t d o e s no t f o r m pa rt of an y q uotati o n or con t ra ct, i s b e l i e v e d to b e a ccu rate and re l i a b l e a nd m a y be cha n g ed w i tho u t n o ti ce.
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